1、-20V P-Channel Enhancement Mode MOSFETDescription General Features Application DGSPackage Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity A5SHBSOT-23 180mm 8 mm 3000 units Dimensions SOT-23 Pin Configuration Rev:01.07.20211/ Absolute Maximum Rating
2、s(TC=25unless otherwise noted)5The IRLML2244 uses advanced trench technology to provide excellent RDS(ON),low gate charge and operation with gate voltages as low as 4.5V.This device is suitable for use as a Battery protection or in other Switching application.VDS=-20V ID=-4.9A RDS(ON)38m VGS=-4.5V B
3、attery protection Load switch Uninterruptible power supply Symbol Parameter Rating Units VDS Drain-Source Voltage-20V VGS Gate-Source Voltage 12 V IDTA=25 Continuous Drain Current,VGS -4.5V1-4.9A IDTA=70 Continuous Drain Current,VGS -4.5V1-3.9A IDM Pulsed Drain Current2-14A PDTA=25 Total Power Dissi
4、pation3 1.31 W PDTA=70 Total Power Dissipation3 0.84 W TSTG Storage Temperature Range-55 to 150 TJ Operating Junction Temperature Range-55 to 150 RJA Thermal Resistance Junction-Ambient 1 120/W RJA Thermal Resistance Junction-Ambient 1(t 10s)95/W IRLML2244IRLML2244 Rev: Electrical Characteristics(TJ
5、=25,unless otherwise noted)2/5Symbol Parameter Conditions Min.Typ.Max.Unit BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=-250uA -20 -V BVDSS/TJ BVDSS Temperature Coefficient Reference to 25,ID=-1mA -0.014 -V/RDS(ON)Static Drain-Source On-Resistance2 VGS=-4.5V,ID=-4.9A -32 38 m VGS=-2.5V,ID=-3.4A -4
6、5 55 VGS=-1.8V,ID=-2A -65 85 VGS(th)Gate Threshold Voltage VGS=VDS,ID=-250uA -0.4 -1.0 V VGS(th)VGS(th)Temperature Coefficient -3.95 -mV/IDSS Drain-Source Leakage Current VDS=-16V,VGS=0V,TJ=25 -1 uA VDS=-16V,VGS=0V,TJ=55 -5 IGSS Gate-Source Leakage Current VGS=12V,VDS=0V -100 nA gfs Forward Transcon
7、ductance VDS=-5V,ID=-3A -12.8 -S Qg Total Gate Charge(-4.5V)VDS=-15V,VGS=-4.5V,ID=-3A -10.2 14.3 nC Qgs Gate-Source Charge -1.89 2.6 Qgd Gate-Drain Charge -3.1 4.3 Td(on)Turn-On Delay Time VDD=-10V,VGS=-4.5V,RG=3.3,ID=-3A -5.6 11.2 ns Tr Rise Time -40.8 73 Td(off)Turn-Off Delay Time -33.6 67 Tf Fall
8、 Time -18 36 Ciss Input Capacitance VDS=-15V,VGS=0V,f=1MHz -857 1200 pF Coss Output Capacitance -114 160 Crss Reverse Transfer Capacitance -108 151 IS Continuous Source Current1,4 VG=VD=0V,Force Current -4.9 A ISM Pulsed Source Current2,4 -14 A VSD Diode Forward Voltage2 VGS=0V,IS=-1A,TJ=25 -1 V trr
9、 Reverse Recovery Time IF=-3A,di/dt=100A/s,TJ=25 -21.8 -nS Qrr Reverse Recovery Charge -6.9 -nC Note:1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.2.The data tested by pulsed,pulse width 300us,duty cycle 2%3.The power dissipation is limited by 150 junction temperature
10、4.The data is theoretically the same as ID and IDM,in real applications,should be limited by total power dissipation.01.07.2021IRLML2244 Rev: 3/5 Typical Characteristics Fig.6 Normalized R DSON vs.T J 01.07.2021IRLML2244Rev: 4/5 Fig.9 Normalized Maximum T ransient Thermal Impedance Fig.10 Switching
11、Time Waveform Fig.11 Gate Charge Waveform 01.07.2021IRLML2244Shanghai Leiditech Electronic Co.,Ltd Email: Tel:+86-021 50828806 Fax:+86-021 50477059 Rev: 5/5Package Mechanical Data-SOT-23 Symbol Dimensions in Millimeters MIN.MAX.A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 0 8 01.07.2021IRLML2244
