1、 MOSFET technology to provide low RDS(ON),low gate charge,fast switching and excellent avalanche characteristics.This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on)&FOM Extremely low switching loss Excellent stability and uniformity or Invertors App
2、lications Consumer electronic power supply Motor control Synchronous-rectification Isolated DC Synchronous-rectification application Package Marking and Ordering Information Product ID Pack Marking Qty(PCS)DFN5*6-8L 5000 Absolute Maximum Ratings at Tj=25 unless otherwise noted Parameter Symbol Value
3、 Unit Drain source voltage VDS 100 V Gate source voltage VGS 20 V Continuous drain current1),TC=25 ID 40 A Pulsed drain current2),TC=25 ID,pulse 120 A Power dissipation3),TC=25 PD 72 W Single pulsed avalanche energy5)EAS 30 mJ Operation and storage temperature Tstg，Tj -55 to 150 Thermal resistance,j
4、unction-case RJC 1.74 /W Enhancement Mode Field Effect TransistorN-Channel Rev 2.0: 12.01.20191/6STL45N10F7AGSTL45N10F7AG use advanced SGTSTL45N10F7AGAPG40N10NFThermal resistance,junction-ambient4)RJA 62 /W Electrical Characteristics at Tj=25 unless otherwise specified Parameter Symbol Test conditio
5、n Min.Typ.Max.Unit Drain-source breakdown voltage BVDSS VGS=0 V,ID=250 A 100 V Gate threshold voltage VGS(th)VDS=VGS,ID=250 A 1.0 2.5 V Drain-source on-state resistance RDS(ON)VGS=10 V,ID=8 A 16 20 m Drain-source on-state resistance RDS(ON)VGS=4.5 V,ID=6 A 26 m Gate-source leakage current IGSS 100 n
6、A VGS=20 V -100 Drain-source leakage current IDSS VDS=100 V,VGS=0 V 1 A Input capacitance Ciss VGS=0 V,VDS=50 V,=1 MHz 1190.6 pF Output capacitance Coss 194.6 pF Reverse transfer capacitance Crss 4.1 pF Turn-on delay time td(on)VGS=10 V,VDS=50 V,RG=2.2,ID=10 A 17.8 ns Rise time tr 3.9 ns Turn-off de
7、lay time td(off)33.5 ns Fall time tf 3.2 ns Total gate charge Qg ID=8 A,VDS=50 V,VGS=10 V 19.8 nC Gate-source charge Qgs 2.4 nC Gate-drain charge Qgd 5.3 nC Gate plateau voltage Vplateau 3.2 V Diode forward current IS VGSVth 40 Pulsed source current ISP 120 A Diode forward voltage VSD IS=8 A,VGS=0 V
8、 1.3 V Reverse recovery time trr IS=8 A,di/dt=100 A/s 50.2 ns Reverse recovery charge Qrr 95.1 nC Peak reverse recovery current Irrm 2.5 A Note 1)Calculated continuous current based on maximum allowable junction temperature.2)Repetitive rating;pulse width limited by max.junction temperature.3)Pd is
9、based on max.junction temperature,using junction-case thermal resistance.4)The value of RJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz.Copper,in a still air environment with Ta=25.5)VDD=50 V,RG=25,L=0.3 mH,starting Tj=25.Rev 2.0: 12.01.20192/6STL45N10F7AGElectrical Characteris
10、tics Diagrams DS Figure 3,Typ.capacitances Figure 4,Typ.gate charge Figure 5,Drain-source breakdown voltage Figure 6,Drain-source on-state resistance Rev 2.0: 12.01.20193/6STL45N10F7AG Rev 2.0: 12.01.20194/6STL45N10F7AG Figure 4,Diode reverse recovery test circuit&waveforms Figure 1,Gate c harge t e
11、st c ircuit&w aveform Figure ,2 S witching time t est c ircuit&w aveforms Figure ,3 Unclamped i nductive s witching(UIS)t est c ircuit&w aveforms Rev 2.0: 12.01.20195/6STL45N10F7AGPackage Mechanical Data-DFN5*6-8L-JQ Single Symbol Common mm Inch Mim Max Min Max A 1.03 1.17 0.0406 0.0461 b 0.34 0.48
12、0.0134 0.0189 c 0.824 0.0970 0.0324 0.082 D 4.80 5.40 0.1890 0.2126 D1 4.11 4.31 0.1618 0.1697 D2 4.80 5.00 0.1890 0.1969 E 5.95 6.15 0.2343 0.2421 E1 5.65 5.85 0.2224 0.2303 E2 1.60/0.0630/e 1.27 BSC 0.05 BSC L 0.05 0.25 0.0020 0.0098 L1 0.38 0.50 0.0150 0.0197 L2 0.38 0.50 0.0150 0.0197 H 3.30 3.50 0.1299 0.1378 I/0.18/0.0070 Shanghai Leiditech Electronic Co.,Ltd Email: Tel:+86-021 50828806 Fax:+86-021 50477059Rev 2.0: 12.01.20196/6STL45N10F7AG
