1、2N7002KT Features High density cell design for low RDS(ON)Voltage controlled small signal switch Rugged and reliable High saturation current capability Applications Load Switch for Portable Devices DC/DC Converter Marking:KN Maximum Ratings(Ta=25C unless otherwise specified)Symbol Parameter Value Un
2、it VDS Drain-Source voltage 60 V VGS Gate-Source voltage 20 V ID Drain Current 115 mA PD Power Dissipation 150 mW RJA Thermal Resistance from Junction to Ambient 833 C/W TJ Junction Temperature 150 C TSTG Storage Temperature-55 to+150 C Electrical Characteristics(Ta=25C unless otherwise specified)Sy
3、mbol Parameter Test Conditions Min Typ Max Unit V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250A 60 V VGS(th)Gate-Threshold Voltage VDS=VGS,ID=250A 1 2.5 V lGSS Gate-body Leakage current VDS=0 V,VGS=20 V 80 nA IDSS Zero Gate Voltage Drain Current VDS=60 V,VGS=0 V 80 nA ID(ON)On-state Drain Cur
4、rent VGS=10 V,VDS=7 V 500 mA RDS(on)Drain-Source On-Resistance VGS=10V,ID=500mA 5 VGS=5V,ID=50mA 7 gfs Forward Trans conductance VDS=10V,ID=200mA 80 mS VDS(on)Drain-source on-voltage VGS=10V,ID=500mA 3.75 V VGS=5V,ID=50mA 0.375 VSD Diode Forward Voltage IS=115mA,VGS=0 V 0.55 1.2 V Ciss Input Capacit
5、ance VGS=0V VDS=25V f=1.0MHz 50 pF Coss Output Capacitance 25 Crss Reverse Transfer Capacitance 5 td(on)Turn-On Time VDD=25 V,RL=50,ID=500mA,VGEN=10V,RG=25 20 ns td(off)Turn-Off Time 40 GateSourceDrain321(Top View)SOT-523 Plastic-Encapsulate Mosfets Rev:01.06.2014 1/3 2N7002KT Rev:01.06.2014 2/3 2N7002KT Shanghai Leiditech Electronic Co.,Ltd Email: Tel:+86-021 50828806 Fax:+86-021 50477059 Rev:01.06.2014 3/3 SOT-523 PACKAGE OUTLINE&DIMENSIONS*SOLDERING FOOTPRINT
