1、Description The uses advanced trench technology to provide excellent RDS(ON),low gate charge and operation with gate voltages as low as 4.5V.This device is suitable for use as a Battery protection or in other Switching application.General Features VDS=-100V ID=-15A RDS(ON)185m VGS=10V(Type：145m)Appl
2、ication Brushless motor Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS)TO-252AP15P10D XXX YYYY 2500 Absolute Maximum Ratings(TC=25unless otherwise noted)Symbol Parameter Rating Units VDS Drain-Source Voltage-100V VGS Gate-Source Volt
3、age 20 V IDTC=25 Continuous Drain Current,VGS -10V1-15A IDTC=100 Continuous Drain Current,VGS -10V1-12A IDM Pulsed Drain Current2-45A EAS Single Pulse Avalanche Energy3 56mJ IAS Avalanche Current-15A PDTC=25 Total Power Dissipation4 50W TSTG Storage Temperature Range-55 to 150 TJ Operating Junction
4、Temperature Range-55 to 150 RJA Thermal Resistance Junction-Ambient 1 62.5/W RJC Thermal Resistance Junction-Case1 2.5/W-100V P-Channel Enhancement Mode MOSFETDimensions TO-252Pin Configuration Rev:01.0 .2021 /1 58STD15P6F6AGSTD15P6F6AGSTD15P6F6AGP-Channel Electrical Characteristics(TJ=25,unless oth
5、erwise noted)Symbol Parameter Test Condition Min.Typ Max.Uni ts BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=-250A-100-V IDSS Zero Gate Voltage Drain Current VDS=-80V,VGS=0V-1 A IGSS Gate to Body Leakage Current VDS=0V,VGS=20V-100 nA VGS(th)Gate Threshold Voltage VDS=VGS,ID=-250A-1.0-2.5 V RDS(on)
6、Static Drain-Source On-Resistance note1 VGS=-10V,ID=-2A-145 185 m VGS=-4.5V,ID=-1A-170 200 Ciss Input Capacitance VDS=-50V,VGS=0V,f=1.0MHz-1545-pF Coss Output Capacitance-37-pF Crss Reverse Transfer Capacitance-25-pF Qg Total Gate Charge VDD=-50V,ID=-2A,VGS=-10V-27-nC Qgs Gate-Source Charge-5.3-nC Q
7、gd Gate-Drain(“Miller”)Charge-3.2-nC td(on)Turn-On Delay Time VDS=-50V,ID=-2A RG=4.5,RL=25 VGEN=-10 V-10-ns tr Turn-On Rise Time-27-ns td(off)Turn-Off Delay Time-288-ns tf Turn-Off Fall Time -88-ns IS Maximum Continuous Drain to Source Diode Forward Current-18 A VSD Drain to Source Diode Forward Vol
8、tage note1 VGS=0V,IS=-2A-1.3 V trr Reverse Recovery Time VGS=0V,Isd=-6A,di/dt=100A/s-40-nS Qrr Reverse Recovery Charge-28-nC Note:1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.2、The data tested by pulsed,pulse width 300us,duty cycle 2%3、The EAS data shows Max.rating.T
9、he test condition is V DD=-72V,VGS=-10V,L=0.1mH,IAS=-15A 4、The power dissipation is limited by 150 junction temperature 5、The data is theoretically the same as I D and I DM,in real applications,should be limited by total power Rev:01.0 .2021 /2 58STD15P6F6AGTypical Characteristics Rev:01.0 .2021 /3
10、58STD15P6F6AG Rev:01.0 .2021 /4 58STD15P6F6AG Package Mechanical Data:TO-252-3L DimensionsMillimetersInchesRef.Min.Typ.Max.Min.Typ.Max.AA2BCDEGHLV1V22.1000.660.402.500.100.860.600.08300.0260.0160.0980.0040.0340.0246.409.5010.700.3740.4210.0530.0655.906.30L2060.2320.2486.800.2520.2684.474.670.1760.18
11、41.091.210.0430.04871.351.65067B25.185.480.2020.216C20.440.580.0170.023D1E15.30REF4.630.1820.209REFB2EHBGLC2DETAIL ADETAIL AACV1V1V2A2DV1E1D1L2TO-252 Reel Spectification-TO-252 WEFD0P0P2P1D1Tt1B0K0A05AAA ABBB BDimensionsMillimetersInchesRef.Min.Typ.Max.Min.Typ.Max.WEFD0D1P0P1P2A0B0K0Tt115.901.657.40
12、1.4016.101.857.601.600.6260.0650.2910.0550.6340.0730.2990.0631.401.607.9010.4510.600.4110.4170.240.270.0090.0110.0550.0633.904.106.900.27110P00.1540.1618.100.3110.3191.902.100.0750.0830.100.00440.001.5752.780.109329132016.001.757.501.501.504.008.002.0010.500.6300.0690.2950.0590.0590.1570.3150.0790.4136.857.002.682.880.2700.2760.1050.11339.8040.201.5671.583 Shanghai Leiditech Electronic Co.,Ltd Email: Tel:+86-021 50828806 Fax:+86-021 50477059 Rev:01.0 .2021 /5 58STD15P6F6AG
