1、各种半导体LED湿法清洗机 苏州晶洲装备科技施利君 DF PE 1 Batch type: Conventional type Cassette type Cassette less type Single bath type Single wafer type: Scrubber SEZ Wet bench type 2 Wet bench bath configuration SC1DIHFDISC2DIDIDRY Pre Furnace Clean SC1: Standard Clean 1 SC2: Standard Clean 2 HF: Hydrofluoric Acid DI:
2、De Ionized Water Lot Flow 3 Typical Wet Clean Bath P Heat Exchanger filterpump Process bath Measurement tank 4 1.Particle pattern defect 2.Metal contamination Junction leak 3.Organic contamination gate oxide leak 4.Native oxide gate oxide leak 5.Micro Roughnesss gate oxide leak The contamination and
3、 Its influence(沾污及其影响） 5 SC: standard clean, RCA: A company name, DIW: de ionized water SC-1 (RCA1/APM: NH4OH: H2O2: DIW), SC-2 (RCA2/HPM: HCl: H2O2: DIW), CARO (SPM/Piranha: H2SO4: H2O2) H3PO4(H3PO4: DIW) BOE (Buffer oxide etch HF: NH4F) with surfactant（表面活性剂） DHF (Dilute HF) Dry System (Spin Dry/I
4、PA Vapor Dry/Marangoni Dry) Key word 6 SC1(MS) light organic & particle remove DHF Remove chemical oxide or native OX SC2 Removal of metals impurities BOE: Remove oxide with PR HF/HNO3 Remove poly film. SPM(H2SO4:H2O2) Photo resist and metals ions H3PO4 Nitride remove 49%HF remove nitride and thick
5、oxide Chemical application 7 SC1 8 Typical Ratio : NH4OH : H2O2 : DI = 1:1:5-1:2:50 Temp : 40 80 C Mechanism: Solution oxidize surface organics and dissolves soluble complexes formed. PH is high Low stability of metal impurities NH4OH Dissolves SiO2 and etches Si H2O2 Oxidizer, forms layer of chemic
6、al oxide Deposition of some species of metals on oxide (e.g. Fe, Ca) 9 10 Relationship of Zeta Potentials and pH Value 11 SC2 12 Typical ratio: Hcl: H2O2:DI = 1:1:5 1:1:50 Temp : Typical 80c Purpose: Remove metallic impurities from wafers Mechanism（机制）: Low PH improves solubility of metallic impurit
7、ies（低的PH值可以提高金属杂质的溶解度） Metallic chlorides formed (Metals like Fe,Ca can be removed)（形成金属氯化物） H2O2 forms chemical oxide (Affect Oxide quality) 13 HF Ratio: 100:1- 10:1 Temp: Typical 23 25 C Purpose: Silicon dioxide removal Nitride removal (Rare) 38%HF SiO2+6HF SiF6 + 2H2O + H2 Hydrophobic（疏水）surface
8、produced (Particle sensitive) 14 SPM(Caro) 15 Main Reactive Compound : H2S2O5 Caros acid Typical Temp: 130 C Chemical Ratio : H2SO4 : H2O2 = 4:1-6:1 After dry ashing and IMP post clean, Photo resist remove and light organic remove for pre -clean 16 Si3N4+H2O 3SiO2+4NH3 H3PO4为催化剂，H2O为主要反应物 nTypical C
9、hemical used : Hot H3PO4 acid nTemperature: 150 C to 165 C nMajor use: Stripping of nitride mask nEtch characteristic: Isotropic（各向同性刻蚀） H3PO4 17 Types of Drying Methods: Spin Dry IPA Vapor Dry (Hot IPA) Marangoni Dry (Room Temp IPA) Hot N2 + IPA fume Dry Performance Indices: Drying Speed Particle l
10、evel Water mark Metal impurity Dry technology 18 Monitor Technique Particle Count Laser Surface Scanner Particle in bath Liquid Particle Counter Metal Contamination TXRF (ICPMS)（全反射X荧光） Etch rate/uniformity Ellipsometer（偏振光椭圆率测试仪 ） (Organic contamination XPS（X光电子能谱仪）TOF- SIMS) Micro roughness AFM（原子
11、力显微镜） 19 For wet bench , we normally monitor Particle, Etch rate(DHF,H3PO4) and TXRF items. 1.Particle 1wafer/once/ day spec30pcs (0.16m) 2. Etch rate 1wafer/once/day 3.TXRF(Total Reflection X-ray Fluorescence) 1wafer/once/week use the same wafer as particle test wafer, after particle test Monitor f
12、requency 20 Monitor wafer type 1.Particle: H3PO4 bath use oxide film wafer, others use bare wafer. If Particle count more than 100, need reclaim. 2. Etch rate: a.DHF, BOE use oxide film wafer(4500A), when film thickness lower than 1000A, need reclaim b.H3PO4 use Nitride film wafer(1700A), only can use once , then need reclaim. 21 Etch Rate Data 22 Chuck Wash/Rinse: For chuck/robot clean chemical residue Over Flow: Normally after HF/BHF/BOE (hot)Quic礀葵鵑禘葵鵑蝬
