1、 better In the second half of the 1 9 th century many great inventions were madeAmong them were the camera，the light and the radioThese all play a big part in our daily life today The first part of the 20th century saw more great inventionsThe helicopter in 1 909movies with sound in 1926，the compute
2、r in 1928，jet planes in 1 9 30This was also a time when a new material was first madeNylon came out in 1935It changed the kind of clothes people wore The middle part of the 20th century brought new ways to help people get over diseasesThey worked very wellThey mad e people healthier and allowed them
3、 to live longerBy the 1 960s most people could expect to live to be at least 60 By this time most people in developed countries had a very good 1ifeOf course new inventions continued to be madeBut man now had a desire(渴望)to explore againThe earth was known to man but the stars were notMan began look
4、ing for ways to go into spaceRussia made the first stepThen the United States took a stepSince then other countries，including China and j apanhave made their own steps into space In 1 969 man took his biggest step away from earthAmericans first walked on the moonThis is certainly just a beginning，th
5、oughNew inventions will some day allow us to do things we have neveryet dreamed of1This passage talks mainly about_Awhy cars were very important B. when it was invented Chow inventions affect peoples daily life D。which country made the first step into space2According to the passage man didnt have a
6、desire to explore a lot_ Aat the beginning of the l 800s Bin the 1960s Csince the 1900s Dfrom the l 800s to the 1960s 3In the l 800s，people began to work ln order to make _ Aexplorations Btheir life better Cdiscoveries Da trip to space 4Nylon came out five years later than _Aradios B.camerasC. jet p
7、lanes Dmovies5People can live longer lives because _ that help cure diseases have worked very wellAdoctors Bnew waysCmedicines Dnew hospitalsV任务型阅读 No one knows how old kites areWe know that they were in use centuries agoBut we do not know for certain when kites were first flownGreek stories tell of
8、 kites in about 400 BCIn Korea，stories tell about the kites in warIt is said that a general used a kite to excite his armyA lantern joined to the kite looked like a new star to the troopsThis star was thought to be a sign of good luck from the heavenTwenty-four centuries ago，kites were known in Chin
9、aThese first kites were probably made of woodThey may even have been covered with silk because silk was in use at that timeAbout five centuries later，Chinese learned how to make paper from vegetable fiberThis may have been used as a cover for early kites，too Early kites were built for certain usesIn
10、 ancient China，they were used to carry ropes across riversIt is told that one general flew musical kite cover the enemy campThe enemy fled believing 1，he sound to be the warning voice of GodStories tell elmanned kites，tooThese were used to drop men behind enemy linesManned kites were used to spyon t
11、lle enemy任务一：根据短文内容和首字母提示填空1.In Korea a general e_his army by flying a lantern in shape of a star.2.Twentyfour centuries agokites were known in China3.Manned kites were used to drop men to get information about the enemy,任务二：根据短文回答问题4Can we judge that kites were invented later than silk from the pas
12、sage? _6PD X-射线衍射；电存储性能测试（I-V图）： TektronixKeithley4200半导体分析仪。第3章 结果与讨论第3.1节 光物理性能Fig.1 UV-Vis absorption spectra of PF-EHBAI and PCz-EHBAI in CHCl3 solution and film states.Fig.1 是分子PF-EHBAI和PCz-EHBAI在溶液和薄膜状态时的紫外-可见光谱图。在溶液中，PF-EHBAI和PCz-EHBAI表现出相似的光学吸收，这主要得益于两个聚合物相似的结构骨架。PF-EHBAI和PCz-EHBAI的最大吸收峰分别出现
13、在683和684 nm，这可对应于分子骨架中给体到受体间的电荷转移作用。在旋涂的薄膜中，PF-EHBAI和PCz-EHBAI的电荷转移峰均发生了红移，分别出现在689和713 nm处。与溶液吸收相比，紫外光谱的红移意味着分子在薄膜状态时发生了一定的聚集或形成了较为规整的堆积。除此以外，PF-EHBAI较小的红移表明薄膜中的聚集和链填充比较弱，这可归因于聚合物中连接到芴单元的两个呈垂直分布的长分支侧链，导致聚合物主链的平面性较差。从薄膜的较低能量吸收边缘分别估计PF-EHBAI和PCz-EHBAI的光学带隙分别为1.51和1.48 eV，相关数据总结在Table 1中。第3.2节 电化学性能Fi
14、g.2 Cyclic voltammogram of PCz-EHBAI (a) 、PF-EHBAI (b) and on ITO substrates in CH3CN solution with 0.1M tetrabutylammonium perchlorate as electrolyte and ITO glass as the working electrode.(c) The external ferrocene/ferrocenium (Fc/Fc+) redox standard potential.Fig.2 是PF-EHBAI和PCz-EHBAI薄膜在乙腈溶液中的循环伏
15、安曲线，测试中使用了常规三电极装置，二茂铁/二茂铁盐（Fc/Fc+）氧化还原电势作为内标，ITO玻璃作为工作电极。将旋涂制得PF-EHBAI和PCz-EHBAI薄膜放置在10 mL乙腈溶液中，并加入0.1 M四正丁基高氯酸铵作为电解质，Ag/AgCl作为参比电极，铂片电极作为辅助电极，测得PF-EHBAI和PCz-EHBAI的起始氧化还原电势为1.10 eV和0.91 eV。根据以往的研究可以知道Fc/Fc+标准氧化还原电势的HOMO能级在零真空状态时是-4.8eV。由以下公式： HOMO = - ( Eonset + 4.8 - Eferrocene). LUMO = HOMO+ Eg.可以
16、求得PF-EHBAI和PCz-EHBAI的最高占据分子轨道能级（HOMO）和最低占据分子轨道能级（LUMO），其中Eferrocene为二茂铁的标准氧化还原电势，相关数据总结在Table 1中。Table 1. Optional and electrochemical properties of the films fabricated with PF-EHBAI and PCz-EHBAI Moleculeonset(nm)Eg(eV)aEonset(eV)bHOMO(eV)cLUMO(eV)dITO-HOMO(eV)LUMO-Al(eV)PF-EHBAI8251.501.10-5.41-3
17、.910.610.37PCz-EHBAI8391.480.91-5.22-3.740.420.54a Estimated from the onset of absorption:bandgap=1240/onset；b Potential vs. Ag/AgCl in a CH3CN solution of tetrabutylammonium perchlorate；c The HOMO energy level were calculated from cyclic voltammetry with reference to ferrocene (0.49 eV):HOMO=-( Eon
18、set+4.8-Eferrocene)；d LUMO=HOMO+Eg.由公式算得PF-EHBAI和PCz-EHBAI 的HOMO能级分别为-5.41 eV和-5.22 eV，LUMO能级分别为-3.91 eV和-3.74 eV。因此从电极到有机分子层的空穴能垒（即ITO电极的功函数与有机分子的HOMO能级之间的差异）分别为0.61eV（PF-EHBAI）和0.42eV（PCz-EHBAI）。而电极到有机层的电子注入能垒（即Al电极的功函数与有机分子的LUMO能级之间的差异）分别为0.37 eV（PF-EHBAI） 和0.54 eV（PCz-EHBAI），如图3所示。因此对于PF-EHBAI来说
19、，其电荷转移过程主要是由电子注入主导的，而对于PCz-EHBAI而言空穴注入则是占主导地位的传导过程。Fig.3 Schematic illustration of the charge transfer process of PCz-EHBAI (a) and PF-EHBAI (b) based on memory device.第3.3节 薄膜的微观堆积X-射线衍射（XRD）被用来考察有机分子薄膜的结晶度和微观结构，如Fig.4所示，PF-EHBAI和PCz-EHBAI薄膜均表现出尖锐的多重峰，说明PF-EHBAI和PCz-EHBAI在固体状态时均形成了规整的薄膜。21.3 和30.0处
20、出现的两个衍射峰均属于ITO玻璃基底的特征峰。同时，PF-EHBAI和PCz-EHBAI薄膜在2 = 9.48处的衍射峰对应的dspacing = 9.32，这属于聚合物PF-EHBAI和PCz-EHBAI的长程有序堆积。同时，在2=28处也出现的明显的衍射峰，其对于的d spacing为3.2 ，这是一个典型的pi-pi堆积峰，意味着聚合物PF-EHBAI和PCz-EHBAI骨架中均发生了非常紧密的堆积，这有利于电荷载体在分子间的自由传输。Fig.4 X-ray diffraction (XRD) patterns of the thin films deposited on ITO sub
21、stratefor the two molecules. 同时原子力显微镜（AFM）也被用来测试薄膜的表面形貌，进而了解分子的结晶状态和薄膜与电极的接触程度。Fig.5是PF-EHBAI和PCz-EHBAI薄膜的表面形貌，从图中可以看出两个共轭聚合物均形成了鳞片状的表面形貌，这是因为PF-EHBAI和PCz-EHBAI中的咔唑、芴和BAI基团均含有较大的共轭平面，有利于分子间的pi-pi作用，从而增大分子间相互作用力，形成层与层状的堆积。但是相比较而言PCz-EHBAI的表面粗糙度还是比PF-EHBAI更小一点，这主要是因为聚合物中连接咔唑单元和长分支侧链的氮原子是呈SP2杂化的，因此聚合物主
22、链的平面性较PF-EHBAI要优异很多。同时，PCz-EHBAI中咔唑的共轭程度要优于PF-EHBAI中芴的共轭程度，从而PCz-EHBAI的分子堆积以及平整性的要更为规整，进而也会降低薄膜与电极间的注入能垒。Fig.5 The tapping-mode AFM height images of PF-EHBAI (a) and PCz-EHBAI (b) films spin-coated onto ITO glass; typical cross-section profile of AFM topographic image of PF-EHBAI (c) and PCz-EHBAI (d) .第3.4节 存储器件的电学性能Fig.6 The model of the sandwich structured memory device ITO/PCz-EHBAI/Al and ITO/PF-EHBAI/Al.Fig.6 为存储器件的结构图，其中底电极为ITO玻璃，中间的有机物作为功能材料，顶电极是通过蒸镀制备的约为100nm的铝电极。在蒸镀好的测试单元上施加一个0到-5V的扫描电压，器件ITO/PCz-EHBAI/A
